Wanghong 75nm NOR flash memory production in the next quarter

According to the Taiwan Economic Daily, Wang Hong announced yesterday that its NOR-type flash memory products were introduced into the 75-nanometer manufacturing process in advance, and began sampling international WiMAX and digital set-top box (STB) OEMs. The fourth quarter went into mass production.

The recent NOR-type flash memory market has cooled down compared to the first half of the year. After Wanghong's introduction of the 75-nm manufacturing process, it will help increase competitiveness and reduce the impact of weak market conditions. Allegedly, the recent NOR flash memory market has not been as hot as it was in the first half of the year, mainly due to the urgency of previous customer pick-up, but the PC, notebook and other markets are not as expected, customer stocks generally increase, and purchases tend to be conservative.

Wanghong skipped the 90-nanometer process technology and imported it directly into the 75nm production NOR-type flash memory, locking in applications such as network communications, computers, consumer electronics and handheld devices. Its first 75-nanometer product is the 256MB Parallel NOR Flash, which has already begun sampling for volume production in the fourth quarter.

Wang Hong pointed out that 75-nanometer products can increase the output per unit of wafer in middle-end and high-end capacity products, and meet the demand for flash memory due to the continuous increase in the capacity of the equipment's Boot code.

In addition, 75nm products also provide 1.8V low voltage technology platform to meet the handheld device and portable application market requirements for thin and light chips and low power consumption, the future 64MB and 128MB capacity NOR flash memory products, will also be introduced into the 75-nanometer production.

Wanghong is planning to build 12-inch wafer production capacity, and is expected to reach 10,000 monthly capacity in the first half of next year, and will introduce a newer generation of 57-nanometer NOR flash memory process at the 12-inch plant.

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