Most ESD protection solutions available in the market today are tailored for consumer electronics, but automotive electronics designers face unique challenges due to ESD threats. What worries them is not just standard ESD events, but also specific automotive scenarios such as short-to-battery (STB) and short-to-ground (STG), which can lead to serious failures.
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Car battery short-circuit events can occur during assembly, repair, or even normal use of a vehicle by the consumer. For instance, during maintenance, exposed battery cables may accidentally connect to various interfaces, potentially damaging ESD protection components. A common example during usage is when a USB cable drops into the cigarette lighter socket, introducing the 12V battery voltage into the interface. The presence of a 12V power network in automotive systems adds more pressure on ESD protection devices, as they must handle intentional or accidental shorts between interfaces and battery lines. Therefore, a conventional 5V ESD device used in consumer electronics is no longer sufficient in these situations.
ON Semiconductor’s automotive-grade ESD protection devices are specifically designed to manage both battery short-circuit and ground short-circuit events. These devices combine high off-state voltage with current-limiting capabilities, ensuring reliable performance under harsh conditions. In addition, they meet the demands of high-speed data interfaces with low insertion loss, high bandwidth, and ultra-low capacitance, which are essential for maintaining signal integrity.
Several ESD protection devices, including the SZESD7361, SZESD7462, SZESD7102, and SZESD1L001, offer a minimum breakdown voltage of 16V. They can withstand battery short-circuit conditions at voltages as low as 9V and up to 16V. These components provide low-clamping ESD protection and ultra-low capacitance, making them suitable for high-frequency applications running in the GHz range.
Devices like the NIV1161 and NIV2161 feature the same high-performance ESD silicon as the previous models, while integrating small-signal MOSFETs for current limiting. This integration provides additional protection against short circuits and short-to-ground conditions for SoCs. The integrated MOSFETs have a low Rds(on), making them ideal for high-speed data applications that require gigabits per second throughput.
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