Most ESD protection solutions available in the market today are tailored for consumer electronics. However, ESD threats can also pose significant challenges to automotive electronics designers. What worries car engineers most isn’t just standard ESD scenarios but also unique automotive events like battery short circuits (STB), which can cause serious damage if not properly addressed.
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Short-circuit events involving a car battery can occur during assembly, repair, or even normal use by consumers. For example, loose or exposed battery cables might accidentally connect to other interfaces, potentially damaging ESD protection components. A common real-world scenario is when a USB cable falls into the cigarette lighter socket, allowing 12V from the battery to enter the interface line. This presents an added challenge for ESD devices, as they must handle not only ESD events but also unexpected voltage surges from the vehicle’s power system.
Conventional ESD protection devices designed for consumer electronics, such as those with a 5V breakdown voltage, may not be sufficient in automotive environments where higher voltages are present. That’s why automotive-grade ESD protection solutions are essential for ensuring reliability and safety in vehicles.
ON Semiconductor has developed advanced ESD protection devices that combine high off-state voltage with strong current-limiting capabilities, making them ideal for handling both battery short-circuit and ground short-circuit (STG) events. These devices also meet critical requirements for high-speed signal integrity, including low insertion loss, wide bandwidth, and ultra-low capacitance.
Several ESD protection devices, such as the SZESD7361, SZESD7462, SZESD7102, and SZESD1L001, feature a minimum breakdown voltage of 16V. They can withstand battery short-circuit conditions starting at 9V and up to 16V. These components provide low-clamp ESD protection along with ultra-low capacitance, making them suitable for high-frequency operations in the GHz range.
Devices like the NIV1161 and NIV2161 incorporate the same high-performance ESD silicon, but with integrated small-signal MOSFETs that offer current-limiting functions. This helps protect SoCs from short-circuit and short-to-ground conditions. The MOSFETs have a low Rds(on), making them ideal for high-speed data applications running at gigabits per second.
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